DOT7 Workshop, 17th December 2015, Bordeaux France

Abstract: In Europe, a huge effort is actually undertaken to strengthen Europe's leading edge position in integrated THZ devices, circuits and new applications. Cut-off frequencies (fmax) of up to 700 GHz will be possible thanks to the progress of SiGe HBT technology.

The purpose of this full-day tutorial is to provide an insight in the physics of the SiGe-THz devices. In the first session, the fundamental equation of semiclassical transport (the Boltzmann equation) will be discussed taking into account the SiGe HBTs structure where scattering by phonons, alloy fluctuations, impurities and impact ionization is of importance. The second session is dedicated to the exploration of the save-operating-area (SOA) of SiGe-THz devices. The limiting factors such as impact ionization and self-heating will be highlighted.

The afternoon sessions focus on reliability. The first one is dedicated to the presentation of degradation phenomena occurring inside SiGe-THz devices under extreme operation conditions. In the last, the reliability aware circuit design concept will be explained.

Inscription fees: free of charge, just mail to: thomas.zimmer@ieee.org

 

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SiGe for mmWave and THz, 6th September 2015, Paris - France

This workshop will cover SiGe HBT technologies as well as SiGe enabled mm-wave and THz applications. In fact, nowadays SiGe technologies have passed the 600 GHz barrier in terms of maximum oscillation frequency and the 700 GHz barrier is foreseen to fall in 2015. Intrinsic advantages of SiGe HBTs such as co-integration with CMOS permit to design compact, reliable and cost efficient systems for mm-wave applications.

The workshop comprises 4 sessions:
• In the first session, the world-leading SiGe technologies from Europe will be presented.
• The second sessions addresses compact modelling and design challenges for mm-wave and THz devices and circuits.
• In the third sessions, radar related innovative design concepts will be introduced.
• In the last session, end users will give insights about application challenges and potential solutions for qualified products.

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>> Abstracts of the presentations

 

 

15th HICUM workshop 2015, at Keysight Technologies, Böblingen Germany - May 12th and 13th 2015

The HIgh CUrrent Model (HICUM) has become an industry standard
and one of the most suitable compact models for modern HBTs fabricated
in latest process technologies covering a wide range of high-frequency
(incl. mm-wave and sub-mm-wave) applications.

Since 2001, the annual HICUM Workshop has become a technical forum
for model users and developers for discussing the present trends and future
needs of the bipolar transistor modeling design community.

Workshop focus
•Presentations on modeling of various bipolar transistor phenomena
•New parameter extraction methods and strategies
•Model development, testing and performance comparisons
•Model applications in circuits
Learn about the latest developments from the experts in the field

 

 

THz-Workshop: Millimeter- and Sub-Millimeter-Wave circuit design and characterization" ESSDERC/ESSCIRC, on September 26th, 2014

Organized by Thomas Zimmer, Université de Bordeaux, France
In Europe, a huge effort is actually undertaken to strengthen Europe's leading edge position in SiGe HBT technology and modeling as well as SiGe enabled mm-wave applications thanks to the Catrene RF2THz and FP7-IP DOTSEVEN projects.
The purpose of this full-day workshop is to discuss state-of-the-art methods and techniques used to design mmWave and sub-mmWave circuits and how to measure them. The design of (sub-)THz elementary building blocks such as LNA, PA, oscillators and mixers as well as on-chip antennas will be discussed; a framework for selecting the appropriate measurement technique will be given.
Furthermore, SiGe-based integrated mmWave sensors will be reviewed and challenges in the integrated design, for testing, as well as concepts for future applications will be treated, followed by insights from an application driven design to a qualified product.

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>> Clik here to access the public deliverable

 

 

Compact modelling workshop - Shangai, China, 12th June 2014

Organizer: XMOD Technologies China & ICTC-Integrated Circuit Training Center
Attendees: more than 50 people

2 presentations directly linked and acknowledged to DOTSEVEN
• « Electro-thermal characterization of advanced technologies » - T. Zimmer, M. Weiss, C. Maneux, S. Fregonese
• RF measurement methodology up to 100GHZ (B. Ardouin, C. Raya)

 

 

HiCuM workshop Greensboro USA, 21st April 2014

Workshop Organization: Anindya Mukherjee, Michael Schröter

Several presentations directly linked and acknowledged to DOT7 among which the presentation made by Michael Schroeter HICUM Tutorial - part I , II & III
Emitter resistance extraction methods

 

 

 

Open BiPolar Workshop, Bordeaux - France, 3rd October 2013

Open Workshop on European Bipolar related projects: DOTSEVEN & RF2THz
In Europe, a huge effort is actually undertaken to strengthen Europe's leading edge position in SiGe HBT technology and modeling as well as SiGe enabled mm-wave applications thanks to two European projects that are: DOTSEVEN which aims to achieve HBTs with cut-off frequencies (fmax) of around 700GHz and RF2THz which aims at the establishment of a 300mm BiCMOS Silicon technology platform for
emerging RF, mm-wave and THz consumer applications, as well as Si photonics integration. During this common workshop the main achievements of these projects were presented.

>>Click here to access presentations
>> Click here to access the public deliverable


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