DOTSEVEN is a project supported by the European Commission through the Seventh Framework Programme (FP7) for Research and Technology development.
DOTSEVEN: Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology
DOTSEVEN is a very ambitious 3.5 year R&D project targeting the development of silicon germanium (SiGe) heterojunction bipolar transistor (HBT) technologies with cut-off frequencies (fmax) up to 700 GHz. Special attention will be paid to clearly demonstrate the manufacturability and integration with CMOS as well as the capabilities and benefits of 0.7 THz SiGe HBT technology by benchmark circuits and system applications in the 0.1 to 1 THz range.
The main objective of the DOTSEVEN consortium is therefore to reinforce and further strengthen Europe's leading edge position in SiGe HBT technology and modeling as well as SiGe enabled mm-wave applications so as to stay significantly ahead of non-European competition. A highly qualified and success-proven consortium has been set-up to achieve these goals.
Road map & ambition
THz technology is an emerging field which has demonstrated a wide ranging potential. Extensive research during the last years has identified many attractive application areas, and paved the technological paths towards broadly usable THz systems. THz technology is currently in a pivotal phase and will soon be in a position to radically expand our analytical capabilities via its intrinsic benefits. One of the most pressing challenges of THz applications is the development of cost effective, compact & efficient THz signal sources and receivers for everyday applications. In this context, DOTSEVEN is planned to continue the push for fully integrated cost efficient electronic THz solutions. The deployment of the associated high-performance circuits and systems in commercial and other non-military markets is driven mainly by cost, form-factor and energy-efficiency.