NoTitleMain AuthorTitel of the periodical or the seriesYear of publicationRelevant pages
1Scaling influence on the thermal behavior of toward-THz SiGe:C HBTsV. d’Alessandro, G. Sasso, N. Rinaldi, and K. AufingerMicrotherm 20132013pp128-133
2Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systemsA. Magnani, V. d’Alessandro, N. Rinaldi, M. de Magistris, and K. AufingerIEEE PATMOS 20132013pp 227-230
3On the safe Operating Area of Bipolar Cascode AmplifiersV. d'Alessandro, N. Rinaldi, A. G. Metzger, H. M. BanbrookIEEE BCTM 20132013pp 171-174
4Geometry Scalable Model parameter Extraction for mm-Wave SiGe-Heterojunction transistorsA. Pawlak,  M. Schröter, A. FoxIEEE BCTM 20132013pp 127-130
5A scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTsA. K. Sahoo, S. Fregonese, M. Weiß, C. Maneux and T. ZimmerIEEE BCTM 20132013pp 29-32
6Investigation of Electronic Noise in THz SiGe HBTs by Microscopic SimulationC. Jungemann and S.-M. HongIEEE BCTM 20132013pp 1-8
7Automated Transit Time and Transfer Current Extraction for Single Transistor GeometriesT. Rosenbaum, M. Schröter, A. Pawlak, S. LehmannIEEE BCTM 20132013pp. 25-28
880ns/45GHz Pulsed Measurement System for DC and RF Characterisation of High Speed Microwave DevicesM. Weiß, S. Fregonese, M. Santorelli, A. Kumar Sahoo, C. Maneux, T. ZimmerSolid-State Electronics2013Volume 84, pp 74-82, 2013
9Limitations of on-wafer calibration and de-embedding methods in the sub-THz rangeM. Potereau, C. Raya, M. De Matos, S. Fregonese, A. Curutchet, M. Zhang, B. Ardouin, T. Zimmer Journal of Computer and Communications (JCC)2013pp 25-29
10Scaling influence on the thermal behavior of toward-THz SiGe:C HBTsV. d’Alessandro, G. Sasso, N. Rinaldi, and K. AufingerJournal of Physics: Conference Series (IOP science)2014vol. 494, no. 1, 012002, 2014
11Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditionsG.G. Fischer, G. SassoMicroelectronics Reliability 55 (2015)2015Volume 55, Issue 3-4, pp 498-507
12Advanced Modeling of SiGe Heterojunction Bipolar TransistorsA. PawlakTUDpress (PhD thesis)2015
13Isothermal Electrical Characteristic Extraction for mmWave HBTsAmit Kumar Sahoo, Sebastien Fregonese, Mario Weiß, Rosario Desposito, Cristell Maneux and   Thomas Zimmer
IEEE Transactions on Electron Devices
2015Volume 62, Issue 1, pp 232-235
14 A Geometry Scalable Model for Non-linear Thermal Impedance of Trench Isolated   HBTs
Amit Kumar Sahoo, Sebastien Fregonese, Rosario Desposito, Klaus Aufinger, Cristell Maneux and   Thomas Zimmer

IEEE Electron Device Letters
2015
Volume: 36 , Issue: 1, pp 56-58
15Effects of BEOL on Self-heating and Thermal Coupling in SiGe Multi-Finger HBTs under Real Operating ConditionA. D. D. Dwivedi, Anjan Chakravorty, Rosario D'Esposito, Amit Kumar Sahoo, Sebastien Fregonese, and Thomas ZimmerSolid-State Electronics2015Volume 115 – Part A
16Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
A. Fox, B. Heinemann, H. Rücker, R. Barth, G.G. Fischer, Ch. Wipf, St. Marschmeyer, K. Aufinger, J. Böck, S. Boguth, H. Knapp, R. Lachner, W. Liebl, D. Manger, T. F. Meister, A. Pribil, J. Wursthorn
IEEE Electron Device Lett.2015
vol. 36, no. 7, pp. 642-644
17Long-term Mixed Mode and Reverse Stress ConditionsG.G. Fischer, G. Sasso
Microelectronics Reliability
2015Volume 55, Feb-March 2015 - pp498
18SiGe HBT and BiCMOS Process Integration Optimization within the DOTSEVEN ProjectJ. Böck, K. Aufinger, S. Boguth, C. Dahl, H. Knapp, W. Liebl, D. Manger, T.F. Meister, A. Pribil, J. Wursthorn, R. Lachner, B. Heinemann, H. Rücker, A. Fox, R. Barth, G. Fischer, St. Marschmeyer, D. Schmidt, A. Trusch, Ch. Wipf Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE2015pp 121-124
19Experimental and Theoretical Study of fT for SiGe HBTs with a Scaled Vertical Doping ProfileJ. Korn, H. Rücker, B. Heinemann, A. Pawlak, G. Wedel, M.SchröterBipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE2015pp 117-120

20
A 9-81/38-189 GHz Dual-Band Switchable Dynamic Frequency Divider
Al-Eryani, Jidan; Knapp, Herbert; Li, Hao; Aufinger, Klaus; Wursthorn, Jonas; Majied, Soran; Maurer, Linus

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
2015vol., no., pp.1-4
21A fully-integrated 240 GHz direct-conversion quadrature transmitter and receiver chipset in SiGe technologyNeelanjan Sarmah;   Janusz Grzyb;   Konstantin Statnikov;   Stefan Malz;   Pedro Rodriguez Vazquez;   Wolfgang Föerster;   Bernd Heinemann;   Ullrich R. Pfeiffer
IEEE Transactions on Microwave Theory and Techniques
2015Volume 64, Issue 2, Pages 562-574
22An Antenna-Coupled 0.49THz SiGe HBT Oscillator for Active Illumination in Terahertz Imaging ApplicationsPhilipp Hillger;   Janusz Grzyb;   Rudolf Lachner;   Ullrich Pfeiffer Microwave Integrated Circuits Conference (EuMIC), 2015 10th European, IEEE2015Pp 180-183
23A 246 GHz Fundamental Source with a Peak Output Power of 2.8 dBmNeelanjan Sarmah;   Bernd Heinemann;   Ullrich R. Pfeiffer Microwave Integrated Circuits Conference (EuMIC), 2015 10th European 2015pp 184-187
24A Broadband 240 GHz Lens-Integrated Polarization-Diversity On- Chip Circular Slot Antenna for a Power Source Module in SiGe TechnologyJ. Grzyb;   K. Statnikov;   N. Sarmah;   U. R. Pfeiffer Microwave Conference (EuMC), 2015 European 2015Pp 570-573
25A Wideband 240 GHz Lens-Integrated Circularly Polarized On-Chip Annular Slot Antenna for a FMCW Radar Transceiver Module in SiGe TechnologyJ. Grzyb; K. Statnikov; N. Sarmah; U. R. Pfeiffer
Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S International
2015pp 1-4
26
A Lens-Coupled 210−270 GHz Circularly Polarized FMCW Radar Transceiver Module in SiGe Technology Proceedings
Konstantin Statnikov; Janusz Grzyb; Neelanjan Sarmah; Bernd Heinemann; Ullrich R. PfeifferMicrowave Conference (EuMC), IEEE2015pp 550-553
27An OOK-Modulator at 240 GHz with 20 GHz BandwidthPedro Rodriguez-Vazquez; Neelanjan Sarmah; Klaus Aufinger; Ullrich R. Pfeiffer2016 German Microwave Conference (GeMiC), IEEE2016pp345-348
28A 9–81 / 38–189 GHz Dual-Band Switchable Dynamic Frequency DividerJidan Al-Eryani; Herbert Knapp; Hao Li; Klaus Aufinger; Jonas Wursthorn; Soran Majied; Linus Maurer2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)2015pp 1-4

29
A 47–217 GHz dynamic frequency divider in SiGe technologyJidan Al-Eryani , Herbert Knapp ; Hao Li ; Klaus Aufinger ; Jonas Wursthorn ; Soran Majied ; Linus Maurer
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
2015
pp 125-128
30
Compact Broadband Amplifiers with up to 105 GHz Bandwidth in SiGe BiCMOS

Faisal Ahmed; Muhammad Furqan; Klaus Aufinger; Andreas Stelzer

Radio Frequency Integrated Circuit 2015, Phoenix, USA, IEEE
2015pp 3-6

31

A 200—325-GHz Wideband, Low-Loss Modified Marchand Balun in SiGe BiCMOS Technology

Faisal Ahmed; Muhammad Furqan; Andreas Stelzer
Microwave Conference (EuMC), 2015 European, IEEE2015pp 40-43
32An E-band SiGe Power Amplifier with 28 dB Gain and 19.2 dBm Output Power Utilizing an On-Chip Differential Power CombinerMuhammad Furqan; Faisal Ahmed; Martin Jahn; Andreas StelzerMicrowave Integrated Circuits Conference (EuMIC), 2015 10th European, IEEE2015pp 21-24
33A SiGe-Based D-Band Fundamental-Wave VCO with 9 dBm Output Power and -185 dBc/Hz FoMFaisal Ahmed; Muhammad Furqan; Bernd Heinemann; Andreas Stelzer2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)2015pp 1-4
34
A 140—180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS
Muhammad Furqan; Faisal Ahmed; Holger Rucker; Andreas Stelzer
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
2015pp 1-4
35Compact Model Validation Strategies Based on Dedicated and Benchmark circuit blocks for the mm-Wave Frequency Range
B. Ardouin; M. Schroter; T. Zimmer; K. Aufinger; U. Pfeiffer; C. Raya; A. Mukherjee; S. Malz; S. Fregonese; R. D'Esposito; M. De Matos
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
2015
pp 1-4
36Implementation and quality testing for compact models implemented in Verilog-A
Anindya Mukherjee; Andreas Pawlak; Michael Schroter; Didier Celi; Zoltan Huszka
2016 IEEE, Design, Automation & Test in Europe Conference & Exhibition2016pp 403-408
37BiCMOS Integrated Waveguide Power Combiner at Submillimeter-Wave FrequenciesM. Alonso-delPino; D. Cavallo; H. Thippur-Shivamurthy; H. Gao; M. SpiritoIEEE, 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)2015pp 1-2
38Analysis of residual errors due to calibration transfer in on-wafer measurements at mm-wave frequenciesL. Galatro; M. SpiritoBipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE2015 pp 141-144

39
Ageing and thermal recovery of advanced SiGe heterojunction bipolar  transistors under long-term mixed-mode and reverse stress conditionsG.G. Fischer, G. SassoELSEIVER, Microelectronics Reliability2015vol.  55, no. 3-4, pp. 498-507
40Advanced thermal  resistance simulation of SiGe HBTs including backend cooling effect
Alessandro Magnani; Grazia Sasso; Vincenzo d'Alessandro; Lorenzo Codecasa; Niccolô Rinaldi; Klaus Aufinger
Thermal Investigations of ICs and Systems (THERMINIC), 2015 21st International Workshop on, IEEE2015pp 1-5

41
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limitT. Jacquet a, b, , G. Sassob, A. Chakravortyc, N. Rinaldib, K. Aufingerd, T. Zimmera, V. d'Alessandrob, C. ManeuxaELSEIVER, Microelectronics Reliability2015Volume 55, Issues 9-10, pages 1433-1437
42Scaling influence on the thermal behavior of toward-THz SiGe:C HBTsV. d’Alessandro, G. Sasso, N. Rinaldi, and K. AufingerProc. International Seminar on MICROtechnology and THERMal problems in electronics (MICROTHERM), 20132013pp. 128-133
43Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systemsA. Magnani, V. d’Alessandro, N. Rinaldi, M. de Magistris, and K. Aufinger
Proc. IEEE PATMOS, 2013
2013pp. 227-230
44On the safe operating area of bipolar cascode amplifiers
V. d’Alessandro, N. Rinaldi, A. G. Metzger, and H. M. Banbrook

Proc. IEEE BCTM, 2013
2013
pp. 171-174
45Geometry Scalable Model Parameter Extraction for mm-Wave SiGe-Heterojunction TransistorsA. Pawlak, M. Schroter, A. FoxIEEE BCTM 2013.2013pp 127-130

46
A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTsAmit Kumar Sahoo, Sébastien Fregonese, Mario Weiß, Cristell Maneux, Thomas ZimmerIEEE BCTM 2013, Bordeaux, France2013pp 29-32

47
Investigation of Electronic Noise in THz SiGe HBTs by Microscopic SimulationC. Jungemann and S.-M. HongProc. IEEE BCTM 2013,2013 pp. 1-8
48Automated Transit Time and Transfer Current Extraction for Single Transistor GeometriesT. Rosenbaum, M. Schröter, A. Pawlak, S. LehmannIEEE BCTM 20132013
pp 1-8
49Millimeter-Wave on-Wafer TRL Calibration employing 3D EM Simulation-Based Characteristic Impedance ExtractionL. Galatro and M. SpiritoTransactions on Microwave Theory and Techniques, IEEE2016
50An Improved Transfer Current Model for RF and mm-Wave SiGe(C) Heterojunction Bipolar TransistorsA.PawlakTransactions on Electron devices, IEEE2014Volume 61, Issue 8, pp 2612-2618
51Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors
S.Lehmann
Transactions on Electron devices, IEEE2014Volume 61, Issue 11, pp3676-3683
52
Methods for Determining the Emitter Resistance in SiGe HBTs: A Review and an Evaluation Across Technology Generations
J. KrauseTransactions on Electron devices, IEEE2015Volume:62 Issue: 5, pp  1363 - 1374
53Geometry scalable model parameter extraction for mm-wave SiGe-heterojunction transistorsA. PawlakIEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)20134
54A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTsA. PalwakProc. BCTM, IEEE20144
55SiGe HBT modeling for mm-wave circuit design
A. Pawlak

Proc. BCTM, IEEE
20158
56
A HICUM/L2 Model for high-voltage BJTs
A. Pawlak
Proc. BCTM, IEEE
2016
4
57Why is there no internal collector resistance in HICUMM. Schroeter
Proc. BCTM, IEEE
2016
4
58
The EU DOTSEVEN project: Overview and Results

M. Schroeter
Proc. BCTM, IEEE20164