Université Bordeaux I

In 2007, three laboratories, PIOM, IXL and LAPS located in Bordeaux have joined to form the UB1 laboratory (CNRS-UMR, ENSEIRB, University Bordeaux 1,), which now regroups 350 persons (teachers-researchers, technical staff and PhD students). Within IMS, the ‟modeling‟ team of the nanoelectronics research group has a 20 years experience in BJT and HBT modeling. 20 PhD theses carried out, led to over 100 publications (book chapters, technical papers, conferences and workshops).


Thomas Zimmer
Université Bordeaux 1
IMS-Bat A31
351, cours de la Libération
33405 Talence Cedex

UB1 IMS building

Role in the project

UB1 is involved in WP3: Device characterization and compact modeling (with focus on: Device characterization and test structures, Compact model development and parameter extraction, SiGe HBT reliability characterization and modeling), WP4:  Millimeter-wave circuit applications and demonstrators (with focus on Benchmark circuits for model verification) and WP5: Training and dissemination, the latter as WP leader.


Key people involved

Thomas Zimmer received the M.Sc. degree in physics from the University of Würzburg, Germany, in 1989 and the Ph.D. degree in electronics from the University Bordeaux 1, Talence, France, in 1992. From 1989 to 1990, he was with the Fraunhofer Institute, Erlangen, Germany. Since 1992, he is with the IMS Institute, Talence, France. Since 2003, he is Professor at the University Bordeaux 1. At the IMS lab, he is the leader of the research group “Nanoelectronics.” His research interests are focused on electrical compact modeling and characterization of HF devices such as HBT (SiGe, InP), graphene nanotubes and GFETs. He is a cofounder of XMOD Technologies and Senior Member IEEE. He has served as a Reviewer for many journals (IEEE ED, EDL, SSE…) and participated on the Program Committee of several conferences (BCTM, ESSDERC …). He has published more than 150 peer-reviewed scientific articles, 1 book and contributed to 8 book-chapters.

Sébastien Frégonèse was born in Bordeaux, France, in 1979. He received the M.Sc. and Ph.D. degrees in electronics from the Université Bordeaux 1, Talence, France, in 2002 and 2005, respectively. During his Ph.D. research, he investigated bulk and thin SOI SiGe HBTs, with emphasis on compact modeling. From 2005 to 2006, he was with the Technical University of Delft, Delft, The Netherlands, with a postdoctoral position, where his research activities dealt with Si strain FET emerging devices, focusing on process and device simulation. He joined the Centre National de la Recherche Scientifique (CNRS) in 2007 as a Researcher at the IMS laboratory UMR 5218, University of Bordeaux. He is currently working on carbon nanotube compact modeling. Dr. Frégonèse has served as Reviewer for Physica Status Solidi, the IEEE TRANSACTIONS ON ELECTRON DEVICES, and Solid State

Cristell Maneux received the B. Eng. degree in electronics engineering in 1992, the M.Sc. degree in electronics engineering, in 1994, the Ph.D. degree in electronics in 1998; and the professoral dissertation (Habilitation à Diriger des Recherches) in 2007, all from the University of Bordeaux, France. In 1997–1998 she was a Research and Teaching Assistant with the University of Bordeaux. She joined the University of Bordeaux in 1998, where she is Associate Professor in the Department of Electronics Engineering. She is currently head of the electrical characterization and compact modeling team in the Nanoelectronic group at the Laboratory of the Integration from Material to System (IMS). Her research interests include the study of HBT technologies using the finite element simulation, physical analysis and low frequency noise characterization for compact modeling purpose as well as reliability concerns. Since 2005, she has initiated a new research topic on the development of carbon nanotube transistor (CNTFET) compact modeling. For HBT and CNTFET technologies, she has authored or coauthored more than 60 journal publications and conference papers and has gathered significant scientific coordination experience within national and international collaborative research projects over the past decade, having been workpackage leader or scientific coordinator for several national and european projects.

Arnaud Curutchet received Ph.D. from University Bordeaux 1, France, in 2001 in characterization and modelling of low frequency noise on different AlGaN/GaN HEMT technologies. In 2006, he was in post doctorate position at IEMN laboratory, France. Mains topics were large signal characterization (LSNA) and modelling of CNFET transistor. Since September 2007, he is associate professor at the IPB (Institut Polytechnique de Bordeaux). At the IMS laboratory, he works in “Nanoelectronics” group. His research interests are focused on AlGaN/GaN technology, with the characterization and modeling of these transistors in DC, pulsed I-V and low frequency noise, and on HF characterization of SiGe transistors (DOT7). He is the founder of ADV TECH. He has published more than 30 peer-reviewed scientific articles and holds 2 patents.


Recent publications

  • Brice Grandchamp, Virginie Nodjiadjim, Mohammed Zaknoune, Gilles A. Koné, Cyril Hainaut, Jean Godin, Muriel Riet, Thomas Zimmer, and Cristell Maneux, “Trends in submicron InP-based HBT architecture targeting thermal management”, IEEE Transactions on Electron Devices, VOL. 58, NO. 8, AUGUST 2011, pp 2566-2572

  • Mahmoud Al-Sa’di, Sebastien Fregonese, Cristell Maneux, Thomas Zimmer, “TCAD Modeling of NPN-Si-BJT Electrical Performance Improvement Through SiGe Extrinsic Stress Layer”, Journal of materiel science in semiconductor processing, Mat Sci Semicond Process (2011), doi:10.1016/j.mssp.2011.03.002

  • M. H. Ben Jamaa, P.-E. Gaillardon, S. Frégonèse, M. De Marchi, G. De Micheli, T. Zimmer, I. O'Connor and F. Clermidy, "FPGA Design with Double-Gate Carbon Nanotube Transistors", The Electro-Chemical Society Transactions, vol. 34, no. 1, pp. 495-501, 2011.

  • Grandchamp, B.;  Fregonese, S.;  Majek, C.;  Hainaut, C.;  Maneux, C.;  Meng, N.;  Happy, H.;  Zimmer, T.; “Characterization and Modeling of Graphene Transistor Low-Frequency Noise”, IEEE Transactions on Electron Devices, Issue Date: Feb. 2012  Volume: 59 Issue:2  On page(s): 516 - 519

  • S. Ghosh, B. Grandchamp, G.A. Koné, F. Marc, C. Maneux, T. Zimmer, V. Nodjiadjim, M. Riet, J.-Y. Dupuy, J. Godin “Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design” Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1736-1741

  • Tushar Gupta, Clement Bertolini, Olivier Heron, Nicolas Ventroux, Thomas Zimmer, Francois Marc “How to handle Design issues related to Reliability at Functional Level of Abstraction?”, JOLPE Vol. 7 N° 5 , December 2011

  • Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, N. Labat, T. Zimmer, V. Nodjiadjim, J. Godin “Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses G.”, Microelectronics Reliability, Elsevier, 51 (9-11) , pp. 1730-1735

  • Amit Kumar Sahoo, Sébastien Fregonese, Mario Weisz, Nathalie Malbert, Thomas Zimmer, “ A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs ”, IEEE ED, Volume: 59, Issue: 10, 2012 , Page(s): 2619 - 2625

  • Noel Augustine, Khamesh Kumar, Arkaprava Bhattacharyya, Thomas Zimmer, Anjan Chakravorty, “Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme”, IEEE device letters, 2012 , Page(s): 2542 - 2545

  • Sébastien Frégonèse, Nan Meng, Huu-Nha Nguyen, Cedric Majek,Cristell Maneux, Henri Happy, Thomas Zimmer, “Electrical compact modelling of graphene transistors”, Solid-State Electronics 73 (2012) 27–31
    Amit Kumar Sahoo, Mario Weiß, Sébastien Fregonese, Nathalie Malbert, Thomas Zimmer, “Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors”, Solid-State Electronics, Volume 74, August 2012, Pages 77–84

  • Amit Kumar Sahoo, Sébastien Fregonese, Mario Weiß, Brice Grandchamp, Nathalie Malbert, Thomas Zimmer, “Characterization of self-heating in Si–Ge HBTs with pulse, DC and AC measurements, Solid-State Electronics 76 (2012) 13–18”

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