Role in the project
UB1 is involved in WP3: Device characterization and compact modeling (with focus on: Device characterization and test structures, Compact model development and parameter extraction, SiGe HBT reliability characterization and modeling), WP4: Millimeter-wave circuit applications and demonstrators (with focus on Benchmark circuits for model verification) and WP5: Training and dissemination, the latter as WP leader.
Key people involved
Thomas Zimmer received the M.Sc. degree in physics from the University of Würzburg, Germany, in 1989 and the Ph.D. degree in electronics from the University Bordeaux 1, Talence, France, in 1992. From 1989 to 1990, he was with the Fraunhofer Institute, Erlangen, Germany. Since 1992, he is with the IMS Institute, Talence, France. Since 2003, he is Professor at the University Bordeaux 1. At the IMS lab, he is the leader of the research group “Nanoelectronics.” His research interests are focused on electrical compact modeling and characterization of HF devices such as HBT (SiGe, InP), graphene nanotubes and GFETs. He is a cofounder of XMOD Technologies and Senior Member IEEE. He has served as a Reviewer for many journals (IEEE ED, EDL, SSE…) and participated on the Program Committee of several conferences (BCTM, ESSDERC …). He has published more than 150 peer-reviewed scientific articles, 1 book and contributed to 8 book-chapters.
Sébastien Frégonèse was born in Bordeaux, France, in 1979. He received the M.Sc. and Ph.D. degrees in electronics from the Université Bordeaux 1, Talence, France, in 2002 and 2005, respectively. During his Ph.D. research, he investigated bulk and thin SOI SiGe HBTs, with emphasis on compact modeling. From 2005 to 2006, he was with the Technical University of Delft, Delft, The Netherlands, with a postdoctoral position, where his research activities dealt with Si strain FET emerging devices, focusing on process and device simulation. He joined the Centre National de la Recherche Scientifique (CNRS) in 2007 as a Researcher at the IMS laboratory UMR 5218, University of Bordeaux. He is currently working on carbon nanotube compact modeling. Dr. Frégonèse has served as Reviewer for Physica Status Solidi, the IEEE TRANSACTIONS ON ELECTRON DEVICES, and Solid State
Cristell Maneux received the B. Eng. degree in electronics engineering in 1992, the M.Sc. degree in electronics engineering, in 1994, the Ph.D. degree in electronics in 1998; and the professoral dissertation (Habilitation à Diriger des Recherches) in 2007, all from the University of Bordeaux, France. In 1997–1998 she was a Research and Teaching Assistant with the University of Bordeaux. She joined the University of Bordeaux in 1998, where she is Associate Professor in the Department of Electronics Engineering. She is currently head of the electrical characterization and compact modeling team in the Nanoelectronic group at the Laboratory of the Integration from Material to System (IMS). Her research interests include the study of HBT technologies using the finite element simulation, physical analysis and low frequency noise characterization for compact modeling purpose as well as reliability concerns. Since 2005, she has initiated a new research topic on the development of carbon nanotube transistor (CNTFET) compact modeling. For HBT and CNTFET technologies, she has authored or coauthored more than 60 journal publications and conference papers and has gathered significant scientific coordination experience within national and international collaborative research projects over the past decade, having been workpackage leader or scientific coordinator for several national and european projects.
Arnaud Curutchet received Ph.D. from University Bordeaux 1, France, in 2001 in characterization and modelling of low frequency noise on different AlGaN/GaN HEMT technologies. In 2006, he was in post doctorate position at IEMN laboratory, France. Mains topics were large signal characterization (LSNA) and modelling of CNFET transistor. Since September 2007, he is associate professor at the IPB (Institut Polytechnique de Bordeaux). At the IMS laboratory, he works in â€œNanoelectronicsâ€ group. His research interests are focused on AlGaN/GaN technology, with the characterization and modeling of these transistors in DC, pulsed I-V and low frequency noise, and on HF characterization of SiGe transistors (DOT7). He is the founder of ADV TECH. He has published more than 30 peer-reviewed scientific articles and holds 2 patents.