Technische Universität Dresden

The Technische Universität Dresden dates back to the Technische Bildungsanstalt Dresden, founded in 1828 and, thus, ranks among the oldest academic education establishments in Germany. The Chair for Electron Devices and Integrated Circuits (CEDIC) represents an internationally leading research group in the area of compact device modeling for high-speed/high-frequency applications.

 

The Chair for Electron Devices and Integrated Circuits (CEDIC) represents an internationally leading research group in the area of compact device modeling for high-speed/high-frequency applications, including the development of model parameter extraction methods and their experimental application for model verification. Modeling activities comprise Si/SiGe and III/V heterojunction bipolar transistors as well as FETs and the development of tools for statistical and device simulation.

Role in the project

In this project CEDIC focuses on improving the HBT compact model HICUM with respect to physical effects prominent in advanced SiGe-HBTs, including development of physics-based equations and applications to devices and circuits fabricated by project partners, where along with XMOD parameter extraction methods are developed. Also, in cooperation with RWTH existing tools for simulating nanoscale devices are further improved and calibrated to hardware.

Key people involved in the project

Michael Schröter received his Dr.-Ing. degree in electrical engineering and the ”venia legendi” on semiconductor devices in 1988 and 1994, respectively, from the Ruhr-University Bochum, Germany. He was with Nortel and Bell Northern Research, Ottawa, Canada, as a Team Leader and Advisor until 1996 when he joined Rockwell (later Conexant), Newport Beach (CA), where he managed the RF Device Modeling Group. Dr. Schröter has been a Full Professor at the University of Technology at Dresden, Germany, since 1999, and a Research Professor at UC San Diego, USA, since 2003. He is the author of the standard bipolar transistor compact model HICUM and of a textbook on bipolar transistors. He is also a co-founder of XMOD Technologies in Bordeaux, France, was on the Technical Advisory Board of RFMagic (now Entropic Inc.), a communications system design company in San Diego, CA, and was the Technical Program Manager of DOTFIVE, a large European research project on high-speed SiGe HBT technology. During a recent two-year Leave of Absence from TUD he was also Vice President of RF Engineering at RFNano, Newport Beach, CA, where he was responsible for the device design of the first production-type carbon nanotube FET process technology.

 

Paulius Sakalas graduated in 1983 at Vilnius University, Department of Physics and Mathematics and then joined Institute of Semiconductor Physics of Lithuanian Academy of Sciences, where he worked on high Frequency noise in GaAs and InP semiconductors and devices, and received his Ph.D. in 1990. He was a post-doc at the Eindhoven Technical University in the Netherlands (1991) as well as a visiting scientist at Chalmers University of Technology in Gothenburg, Sweden (1996/97, 1999/00) and at CNET of France Telecom (1997/98). Since 2000 he has been with the Chair of Electron Devices and Integrated Circuits at Dresden University of Technology, where he has been in charge of building the existing high-frequency measurement laboratory. He is also a head physician in Fluctuation Phenomena Laboratory in Vilnius, where he worked within SINANO European Framework.

 

Gerald Wedel received the M.S. degree in electrical engineering, working on hydrodynamic simulations for advanced SiGe heterojunction bipolar transistors, in 2008 from the Technical University of Dresden, Dresden, Germany, where he is currently working toward the Ph.D. degree, investigating the physical limits of semiconductor devices, focusing on transport modeling and the development of numerical device simulators.

 

 

SC3b DC Pulsed _IV

 

 

SC3b Semiautomated 50GHz RF Thermal Chuck

 

 

SC3c 50GHz Load Pull

 

 

SC3C 75GHz Noise

 

 

SC3c 110GHz pulsed RF


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